Ammonolysis of gallium phosphide GaP to the ...
· The pnictogenmetathesis reaction of microcrystalline gallium phosphide GaP with ammonia NH 3 at temperatures of 900–1150 °C for 6–60 hours afforded in one step nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN. A suitable choice of conditions including variations of reaction temperature/time and manual grinding or high energy ball milling of the substrate ...